transisor(npn) features z high i cmax .i cmax . = 0.5ma z low v ce(sat) .optimal for low voltage operation. z complements the 2sa1036 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current 500 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma,i b =0 32 v emitter-base breakdown voltage v (br)ebo i e = 100 a,i c =0 5 v collector cut-off current i cbo v cb = 20 v,i e =0 1 a emitter cut-off current i ebo v eb = 4 v,i c =0 1 a dc current gain h fe v ce = 3 v,i c = 100 ma 82 390 collector-emitter saturation voltage v ce(sat) i c = 500 ma,i b = 50 ma 0.4 v transition frequency f t v ce = 5 v,i c = 20 ma,f=100mhz 250 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 6.0 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking cp cq cr sot-23 1. base 2. emitter 3. collector 2SC2411 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2SC2411
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